6
RF Device Data
Freescale Semiconductor
MRF6V2150NR1 MRF6V2150NBR1
TYPICAL CHARACTERISTICS
Figure 10. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
VDD
=20V
25 V
200
14
26
050100 150
18
16
24
22
IDQ
= 450 mA
f = 220 MHz
30 V
35 V
40 V
50 V
20
45 V
35
35
55
10
25_C
TC
=--30_C
85_C
20 3025
15
50
45
40
Pin, INPUT POWER (dBm)
Figure 11. Power Output versus Power Input
P
out
, OUTPUT POWER (dBm)
VDD
=50Vdc
IDQ
= 450 mA
f = 220 MHz
21
28
5
10
80
10
26
24
70
C
60
50
40
30
20
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain and Drain Efficiency
versus CW Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
27
25
23
100 200
25_C
TC
=--30_C
85_C
85_C
Gps
VDD
=50Vdc
IDQ
= 450 mA
f = 220 MHz
25_C
-- 3 0_
22
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=50Vdc,Pout
= 150 W CW, and
ηD
= 68.3%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
MRF6V2300NR5
MOSFET RF N-CH 300W TO-270-4
MRF6V3090NR5
FET RF N-CH 860MHZ 50V TO270-4
MRF6V4300NR5
MOSFET RF N-CH 300W TO-270-4
MRF6VP11KHR6
MOSFET RF N-CH 1000W NI1230
MRF6VP121KHSR6
MOSFET RF N-CH 50V NI-1230S
MRF6VP21KHR6
MOSFET RF N-CH 1000W NI1230
MRF6VP2600HR6
MOSFET RF N-CH 600W NI1230
MRF6VP3091NBR1
MOSFET RF 50V 350MA TO272-4
相关代理商/技术参数
MRF6V2150NBR5-CUT TAPE
制造商:Freescale 功能描述:MRF6V2150 Series 10 - 450 MHz 150 W 50 V N-Channel RF Power MOSFET - TO-272
MRF6V2150NR1
功能描述:射频MOSFET电源晶体管 VHV6 150W
RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V2150NR1_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6V2150NR1-CUT TAPE
制造商:Freescale 功能描述:RF POWER MOSFET 10-450 MHz, 150 W, 50 V
MRF6V2300N
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF6V2300N_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V2300NB
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:N-Channel Enhancement-Mode Lateral MOSFETs
MRF6V2300NBR1
功能描述:射频MOSFET电源晶体管 VHV6 300W TO272WB4N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray